2
RF Device Data
Freescale Semiconductor
MRFG35030R5
Table 3. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DC Characteristics
Off State Drain Current
(VDS
= 3.5 Vdc, V
GS
=
?2 Vdc)
IDSO
—
15
425
μAdc
Off State Current
(VDS
= 28.5 Vdc, V
GS
=
?2.5 Vdc)
IDSX
—
5
42.5
mAdc
Gate?Source Cut?off Voltage
(VDS
= 3.5 Vdc, I
DS
= 1 mA/mm)
VGS(th)
?0.7
?0.85
?1.1
Vdc
Functional Tests
(In Freescale Test Fixture, 50 ohm system)
(1)
V
DD
= 12 Vdc, I
DQ
= 650 mA
,
P
out
= 3 W Avg., f = 3550 MHz,
Single?carrier W?CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
10
12
—
dB
Drain Efficiency
ηD
17
21
—
%
Adjacent Channel Power Ratio
ACPR
—
?41
?36
dBc
Typical RF Performance
(In Freescale Test Fixture, 50
οhm system) VDD
= 12 Vdc, IDQ
= 650 mA, f = 3550 MHz
Output Power, 1 dB Compression Point, CW
P1dB
—
30
—
W
1. Measurements made with device in test fixture.
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